Beilstein J. Nanotechnol.2020,11, 966–975, doi:10.3762/bjnano.11.81
previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated.
Keywords: anodization; crystallographically oriented pores; galliumarsenide (GaAs); nanowires; neutral electrolyte; photocurrent; porous GaAs; Introduction
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Figure 1:
SEM images in cross section of porous GaAs layers for three different conditions of anodization in ...